3D multilevel spin transfer torque devices

Authors

J. Hong, Huazhong University of Science and Technology
M. Stone, Department of Electrical and Computer Engineering, Florida International University
Department of Electrical and Computer Engineering, Florida International University
K. Luongo, Department of Electrical and Computer Engineering, Florida International University
Q. Zheng, Beijing Normal University
Z. Yuan, Beijing Normal University
K. Xia, Beijing Normal University
N. Xu, University of California - Berkeley
L. You, Huazhong University of Science and Technology
Sakhrat Khizroev, Department of Electrical and Computer Engineering, Florida International UniversityFollow

Date of this Version

3-14-2018

Document Type

Article

Abstract

Spin-transfer torque magnetic tunneling junction devices capable of a multilevel three-dimensional (3D) information processing are studied in the sub-20-nm size range. The devices are built using He⁺ and Ne⁺ focused ion beam etching. It has been demonstrated that due to their extreme scalability and energy efficiency, these devices can significantly reduce the device footprint compared to the modern CMOS approaches and add advanced features in a 3D stack with a sub-20-nm size using a spin polarized current.

Comments

Originally published in Applied Physics Letters.

Recommended Citation

Hong, J.; Stone, M.; Department of Electrical and Computer Engineering, Florida International University; Luongo, K.; Zheng, Q.; Yuan, Z.; Xia, K.; Xu, N.; You, L.; and Khizroev, Sakhrat, "3D multilevel spin transfer torque devices" (2018). Electrical and Computer Engineering Faculty Publications. 38.
https://digitalcommons.fiu.edu/ece_fac/38