Document Type



Doctor of Philosophy (PhD)


Electrical Engineering

First Advisor's Name

Osama Mohammed

First Advisor's Committee Title

Committee chair

Second Advisor's Name

Ahmed Ibrahim

Second Advisor's Committee Title

committee member

Third Advisor's Name

Mohammed Hadi

Third Advisor's Committee Title

committee member

Fourth Advisor's Name

Sakhrat Khizroev

Fourth Advisor's Committee Title

committee member


power and energy

Date of Defense



The demand for efficient power conversion systems that can process the energy at high power and voltage levels is increasing every day. These systems are to be used in microgrid applications. Wide-bandgap semiconductor devices (i.e. Silicon Carbide (SiC) and Gallium Nitride (GaN) devices) are very promising candidates due to their lower conduction and switching losses compared to the state-of-the-art Silicon (Si) devices. The main challenge for these devices is that their breakdown voltages are relatively lower compared to their Si counterpart. In addition, the high frequency operation of the wide-bandgap devices are impeded in many cases by the magnetic core losses of the magnetic coupling components (i.e. coupled inductors and/or high frequency transformers) utilized in the power converter circuit.

Six new dc-dc converter topologies are propose. The converters have reduced voltage stresses on the switches. Three of them are unidirectional step-up converters with universal input voltage which make them excellent candidates for photovoltaic and fuel cell applications. The other three converters are bidirectional dc-dc converters with wide voltage conversion ratios. These converters are very good candidates for the applications that require bidirectional power flow capability. In addition, the wide voltage conversion ratios of these converters can be utilized for applications such as energy storage systems with wide voltage swings.



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