Yttria stabilized zirconia buffered silicon: substrates for YBCO microwave applications

Authors

Philip D. Brown, Florida International University

Document Type

Thesis

Degree

Master of Science (MS)

Major/Program

Electrical Engineering

First Advisor's Name

Grover Larkins

First Advisor's Committee Title

Committee Chair

Second Advisor's Name

Yuri Vlasov

Third Advisor's Name

Jean Andrian

Fourth Advisor's Name

Carolyne Van Vliet

Date of Defense

6-28-1998

Abstract

The use Yttria-Stabilized Zirconia (YSZ) as a buffer layer for YBa₂Cu₃O_7-x (YBCO) thin films on (100) silicon (Si) substrates is investigated. YSZ was grown using on-axis pulsed D.C. (PDC) and R.F. magnetron sputtering from a 99.9% pure YSZ target [(Y₂O₃)_0.08(ZrO₂)_0.92]. Sputtering was carried out in Argon/Oxygen atmosphere at total pressures ranging from 6 to 320 mTorr containing 0.1 to 10% Oxygen. Substrate temperatures were varied from 300° C to 900° C. (111), (100) and mixed (100) and (111) oriented YSZ films were produced with thickness of 50 to 200 nm. YBCO films, 200 nm thick, were then grown by pulsed-laser deposition in an atmosphere of 0.5 Torr 0₂ at 750° C. The critical temperature (T_C(R=0)) of the films produced was 75 K - 81K. A "T" resonator design was patterned on the YBCO/YSZ/Si structure and tested. Results show a band-reject response centered at 3.872 GHz with a quality factor of 20,000.

Identifier

FI14051862

Comments

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Recommended Citation

Brown, Philip D., "Yttria stabilized zirconia buffered silicon: substrates for YBCO microwave applications" (1998). FIU Electronic Theses and Dissertations. 1878.
https://digitalcommons.fiu.edu/etd/1878