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Line nanopatterns are produced on the positive photoresist by scanning near-field optical microscope (SNOM). A laser diode with a wavelength of 450nm and a power of 250mWas the light source and an aluminum coated nanoprobe with a 70nm aperture at the tip apex have been employed. A neutral density filter has been used to control the exposure power of the photoresist. It is found that the changes induced by light in the photoresist can be detected by in situ shear force microscopy (ShFM), before the development of the photoresist. Scanning electron microscope (SEM) images of the developed photoresist have been used to optimize the scanning speed and the power required for exposure, in order to minimize the final line width. It is shown that nanometric lines with a minimum width of 33 nmcan be achieved with a scanning speed of 75 𝜇m/s and a laser power of 113mW. It is also revealed that the overexposure of the photoresist by continuous wave laser generated heat can be prevented by means of proper photoresist selection. In addition, the effects of multiple exposures of nanopatterns on their width and depth are investigated.
Aghaei, Sadegh Mehdi; Yasrebi, Navid; and Rashidian, Bizhan, "Characterization of Line Nanopatterns on Positive Photoresist Produced by Scanning Near-Field Optical Microscope" (2015). Electrical and Computer Engineering. 12.